期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 16, 期 9, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.202100641
关键词
electrical conduction mechanism; manganese telluride; small polaron hopping; variable range hopping
资金
- KAKENHI [21J21551, 21H05009, 21K18805]
- Grants-in-Aid for Scientific Research [21K18805, 21J21551, 21H05009] Funding Source: KAKEN
This study investigates the electrical conduction mechanism of a beta-MnTe film with a WZ-type structure. The results show that the film exhibits variable-range hopping (VRH) conduction in the temperature range of 120-300 K. Furthermore, it is found that above 310 K, small polaron hopping conduction dominates.
Manganese telluride (MnTe) compound is known to be a polymorphic chalcogenide. Recently, it has been reported that the MnTe shows nonvolatile memory properties with a significant change in resistance via a polymorphic transition between NiAs-type (NC) structure (low resistance) and wurtzite-type (WZ) structure (high resistance). This crystalline polymorphic MnTe is expected to realize a phase-change memory with fast operation speed and ultralow operation energy. While the NC-MnTe, generally designated as alpha-MnTe, is intensively studied, WZ-MnTe is still poorly understood. Herein this study, electrical conduction mechanism of a beta-MnTe film with a WZ-type structure is studied. A resistivity, Hall mobility, and Seebeck coefficient of the WZ-MnTe film are measured at various temperatures. The temperature dependence of resistivity in the temperature range 120-300 K clearly indicates that the WZ-MnTe film shows a variable-range hopping (VRH) conduction. In this temperature region, with decreasing temperature, the conduction mechanism changes from Mott-VRH conduction to Efros-Shklovskii VRH conduction at about 210 K. Furthermore, the low thermally activated Hall mobility, occurrence of Hall-effect sign anomaly, and relatively low activation energy for thermopower, which are the observed results, suggest that the small polaron hopping conduction is dominant above 310 K.
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