期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 16, 期 9, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.202100616
关键词
artificial synapse; interfacial phase-change memory; neuromorphic computing; phase-change memory; superlattice
资金
- Ministry of Trade, Industry and Energy (MOTIE) [10080625]
- Korea Semiconductor Research Consortium (KSRC) support program for the development of the future semiconductor device
This study fabricates and investigates a two-terminal artificial synapse based on GeTe/Sb2Te3 material, which exhibits excellent multilevel resistance switching by controlling the movement of Ge atoms. The optimal pulse scheme and GeTe/Sb2Te3 layer are used to achieve tunable analog weight update, and nonlinearity of conductance states is achieved for long-term potentiation and depression.
Two-terminal-based artificial synapses have attracted attention because their electronic properties can be applied to next-generation computing. Herein, interfacial phase-change memory (iPCM) devices based on sputter-grown GeTe/Sb2Te3 are fabricated. The iPCM device exhibits excellent multilevel resistance switching via control of entropy by restricting the movement of Ge atoms. Based on this movement, the optimal pulse scheme and GeTe/Sb2Te3 layer are used to implement a tunable analog weight update of artificial synapses. The nonlinearity of 0.32 and 40 conductance states (GeTe/Sb2Te3)(16) iPCM is achieved for long-term potentiation and depression, respectively. This artificial synapse, which stably changes the gradual conductance value, has the potential for significant performance improvement of neuromorphic computing.
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