期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 16, 期 2, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.202100498
关键词
AlGaN; alloy fluctuations; k; p method; UVC light-emitting diodes
资金
- Ministry of Science and Technology, Taiwan, TECCLON international collaboration project [MOST 108-2628-E-002-010-MY3, MOST 110-2923-E-002-002]
- French Agence Nationale de la Recherche (ANR) [ANR-20-CE05-0037-01]
This study investigated the changes in polarization ratio induced by alloy fluctuations, showing that the TM polarization ratio increases with the Al composition in the buffer layer.
For nitride-based AlGaN light-emitting diodes, the fluctuations in the potential caused by alloy disorder can relax the compressive strain in the lower Al (higher Ga) composition sites. However, strain in the quantum wells impacts the bandgap and the transverse magnetic/transverse electric (TE) polarization ratio. Herein, the 6 x 6 k center dot p method combined with a 3D Poisson, drift diffusion, and localization landscape solver is used to study the changes in the polarization ratio due to random alloy fluctuations. The influence of different Al compositions in the buffer layer is studied. The results show that the TM polarization ratio with alloy fluctuations is higher than that without fluctuations. On increasing the Al composition in the buffer layer, the polarization ratio changes from 0.93 to -0.67 when the Al composition changes from 60% to 100%.
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