The Structural, Magnetic, and Transport Properties of the Pulsed Laser-Deposited Co2FeAl Thin Films

Pulsed laser deposition (PLD)-grown Co2FeAl (CFA) thin films on MgO(001) substrates are investigated in terms of structural, magnetic, and transport properties. The crystal structure of CFA thin films is changed from disordered A2 to partly ordered B2 structure, as the substrate temperature (T-s) increases from 600 to 700 degrees C, and both the saturation magnetization M-s and the coercive field H-c are enhanced with increasing T-s. Different from the CFA thin films prepared by magnetron sputtering, longitudinal resistivity shows a local minimum near 20 K for all the films due to a weak localization effect, and this type of low-temperature anomaly is weakened with the improvement of structure ordering. Moreover, the origin of anomalous Hall effect (AHE) in CFA thin films is dominated by intrinsic mechanism, and the scattering-independent intrinsic parameter is enhanced with the increase of T-s due to the improvement of crystal structure.

Automated summary

In this study, Co2FeAl (CFA) thin films grown on MgO(001) substrates by pulsed laser deposition (PLD) were investigated for their structural, magnetic, and transport properties. The crystal structure of the CFA thin films changed from disordered A2 to partly ordered B2 as the substrate temperature increased. Both the saturation magnetization and coercive field were enhanced with increasing temperature. Unlike CFA thin films prepared by magnetron sputtering, all the films exhibited a local minimum in longitudinal resistivity near 20 K, which was weakened with improved structure ordering. The anomalous Hall effect in the CFA thin films was dominated by an intrinsic mechanism, and the scattering-independent intrinsic parameter was enhanced with the improvement of crystal structure.