Reverse-Bias Electroluminescence in Er-Doped β-Ga2O3 Schottky Barrier Diodes Manufactured by Pulsed Laser Deposition

Strong electroluminescence (EL) of reverse-biased Er-doped beta-Ga2O3 Schottky barrier diodes is demonstrated. The devices are prepared by pulsed laser deposition featuring co-doping of n-type dopant Si and isovalent Er, while Schottky contacts are formed by Pt-sputtering. The diodes display a rectification ratio of more than nine orders of magnitude at +/- 3 V in the virgin state, but under a reverse bias that yields a leakage current density of 0.2-0.4 A cm(-2), clearly visible multiband EL emerges. The EL is homogeneously distributed across the diode area, and the peak wavelengths compare well with the reported transition for Er3+.

Automated summary

Reverse-biased Er-doped beta-Ga2O3 Schottky barrier diodes, prepared by pulsed laser deposition, exhibit strong electroluminescence with a rectification ratio of over nine orders of magnitude and a leakage current density of 0.2-0.4 A cm(-2). The electroluminescence is homogeneously distributed across the diode area and the peak wavelengths are consistent with reported transitions for Er3+.