An ab-initio study of electronic and optical properties of RhXO3 (X = Ga, Ag) perovskites

The ab-initio computations were performed to study the electronic and optoelectronic properties of RhXO3 (X = Ga, Ag) perovskites usingWIEN2k code. The RhGaO3 has band gap of 2.29 eV, and the behavior of RhAgO3 is metallic. The sub-TDOS of the studied materials revealed that rhodium and oxygen atoms have significant contributions in the valence band and conduction band formation of both materials. The silver cation is responsible for the reasonable peaks appearing at the Fermi level of RhAgO3, which demonstrated the conducting nature of RhAgO3. The dielectric functions, optical conductivity, energy loss function, absorption coefficient, refractive index, extinction coefficient, and reflectivity are computed for these materials to understand the optical behavior of the studied materials. The analysis of optical properties ensure the RhGaO3 is a promising material for optoelectronics while RhAgO3 has metallic nature.

Automated summary

The electronic and optoelectronic properties of RhXO3 (X = Ga, Ag) perovskites were studied using ab-initio computations. It was found that RhGaO3 has a band gap, while RhAgO3 exhibits metallic nature. The analysis of sub-TDOS and optical properties showed that RhGaO3 is a promising material for optoelectronics, while RhAgO3 is metallic.