Tunability of structural, optical, and electrical properties of pristine MnSe thin film by gradually changing temperature for optoelectronic applications

The pristine manganese selenide (MnSe) thin film was successfully prepared from the bulk materials synthesized using the melt quench process employing the vacuum evaporation approach as the initial step in the scenarios of this study. A steady increase in temperature relative to the pristine sample (at RT) was used to evaluate the tunability of the structural, optical, and electrical characteristics of the pristine and annealed films at different temperatures (323-373 K). The pristine thin film was amorphous, but the annealed films were crystalline, according to X-ray and SEM measurements. On the optical side, this research is unique in that it extracts two energies in Tauc and Urbach regions. These energy were explained using the atomic orbital splitting concept. Finally, the electrical properties were determined using the capacitance and conductance pathways.

Automated summary

The pristine manganese selenide (MnSe) thin film was successfully prepared using the vacuum evaporation approach as the initial step, and the tunability of its structural, optical, and electrical characteristics was evaluated through annealing at different temperatures. The annealed films were found to be crystalline, in contrast to the amorphous pristine film. The optical study extracted two energies in Tauc and Urbach regions and explained them using the concept of atomic orbital splitting. The electrical properties were determined using capacitance and conductance pathways.