Electrical properties of heavily Si-doped GaAsN after annealing

In this study, electron traps in dilute GaAsN are investigated using the temperature dependence of electron concentration (n) and mobility (lie) for annealed heavily Si-doped GaAsN. The temperature dependence of n and lie depends on the annealing temperature, indicating that electrons are excited to the conduction band only from deep electron traps for heavily Si-doped GaAsN annealed at 580 degrees C. However, they are excited to the conduction band from both the deep electron traps and the shallow Si donor level for heavily Si-doped GaAsN annealed at 550 degrees C. The depth of the deep electron traps from the bottom of the conduction band for heavily Si-doped GaAsN annealed at 550 degrees C is almost equal to heavily Si-doped GaAsN annealed at 580 degrees C. The results demonstrate that these deep electron traps are inherent in dilute GaAsN because similar deep electron traps are also observed for the as-grown Si-doped GaAsN.

Automated summary

In this study, deep electron traps in heavily Si-doped GaAsN were investigated, showing that the excitation of electrons to the conduction band depends on the annealing temperature. The results suggest that these deep electron traps are inherent in dilute GaAsN materials, affecting the electron transport properties.