Solution-processed flexible nonvolatile organic field-effect transistor memory using polymer electret

Flexible organic field-effect-transistor (OFET) memory is one of the promising candidates for next-generation wearable nonvolatile data storage due to its low price, solution-processability, light-weight, mechanically flexibility, and tunable energy level via molecular tailoring. In this paper, we report flexible nonvolatile OFET memory devices fabricated with solution-processed polystyrene-brush electret and organic semiconductor blends of p-channel 6, 13-bis-(triisopropylsilylethynyl)pentacene (TIPS-PEN) and n-channel poly-{[N,N'-bis(2-octyl-dodecyl)-naphthalene-1,4,5,8-bis-(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P-(NDI2OD-2T); N2200). Fabricated flexible OFET memory devices exhibited high memory window (30 V) and ON/OFF current ratio (memory ratio) over 10(3). Furthermore, we obtained reliable memory ratio (similar to 10(3)) over retention time of 10(8) s, 100 times of repeated programming/erasing cycles, and 1000 times of bending tests at a radius of 3 mm.

Automated summary

The study presents flexible nonvolatile OFET memory devices fabricated with a solution-processed polystyrene brush electret and organic semiconductor blends, showing high memory window and ON/OFF current ratio, as well as reliable performance over long retention time and repeated bending tests.