期刊
OPTICS EXPRESS
卷 29, 期 23, 页码 37835-37844出版社
Optica Publishing Group
DOI: 10.1364/OE.441389
关键词
-
类别
资金
- National Natural Science Foundation of China [11904302]
- Major Science and Technology Project of Xiamen [3502Z20191015]
The study demonstrated that using a reflective passivation layer (RPL) can significantly improve the light output power of deep ultraviolet LEDs with different p-GaN thicknesses. By improving the external quantum efficiency droops, RPL can enhance the performance of LEDs.
In this study, deep ultraviolet light-emitting diodes (DUV-LEDs) with a reflective passivation layer (RPL) were investigated. The RPL consists of HfO2/SiO2 stacks as distributed Bragg reflectors, which are deposited on two DUV-LEDs with different p-GaN thicknesses. The RPL structure improved the external quantum efficiency droops of the DUV-LEDs with thick and thin p-GaN, thereby increasing their light output power by 18.4% and 39.4% under injection current of 500 mA and by 17.9% and 37.9% under injection current of 1000 mA, respectively. The efficiency droops of the DUV-LEDs with and without the RPL with thick p-GaN were 20.1% and 19.1% and with thin p-GaN were 18.0% and 15.6%, respectively. The DUV-LEDs with the RPL presented improved performance. The above results demonstrate the potential for development of the RPLs for DUV-LED applications. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据