期刊
OPTICS EXPRESS
卷 30, 期 3, 页码 3954-3961出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.449895
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资金
- Agence Nationale de la Recherche [ANR-17-CE24-0015]
- Agence Nationale de la Recherche (ANR) [ANR-17-CE24-0015] Funding Source: Agence Nationale de la Recherche (ANR)
GeSn alloys are highly promising materials for the integration of CMOS-compatible lasers using Group-IV materials. This study demonstrates room temperature lasing at up to 300 K by utilizing GeSn microdisk resonators fabricated on a GeSn-On-Insulator platform through strain engineering and a thick layer of high Sn content GeSn.
GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining strain engineering with a thick layer of high Sn content GeSn. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
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