期刊
OPTICS EXPRESS
卷 29, 期 23, 页码 37653-37660出版社
Optica Publishing Group
DOI: 10.1364/OE.438449
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类别
资金
- National Natural Science Foundation of China [61635010, 61320106013, 61474112, 61574137]
- National Key Research and Development Program of China [2018YFB2200801, 2016YFB0402301]
The study introduces 1.3 μm InGaAlAs/InP lasers integrated with a laterally tapered spot size converter (SSC) in a reverse mesa shape. The fabricated device exhibits low lateral and vertical divergence angles of 8 degrees and 11 degrees, respectively. High quality SSCs with narrow tip width can be achieved through conventional photolithography with a high reproducibility.
We report 1.3 mu m InGaAlAs/InP lasers integrated with laterally tapered spot size converter (SSC) in reverse mesa shape. Because the top width is significantly larger than the bottom width for the reverse mesa ridge, high quality SSCs having narrow tip width can be fabricated through conventional photolithography with a high reproductivity. The Threshold current of the fabricated 1000 mu m long SSC integrated device is 25 mA and 44 mW single facet optical power can be obtained at 300 mA current. The lateral and vertical divergence angles are as low as 8 degrees and 11 degrees, respectively. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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