Solar-blind ultraviolet photodetectors based on homoepitaxial β-Ga2O3 films

beta gallium oxide (beta-Ga2O3) is a promising material for the detection of solar-blind ultraviolet (SBUV). The quality of beta-Ga2O3 crystal has a crucial influence on the performance of the photodetectors (PDs). In this paper, SBUV PDs were fabricated on high quality homoepitaxial beta-Ga2O3 films grown by metal organic chemical vapor deposition (MOCVD). Both photoconductor PD and Schottky barrier diode (SBD) PD were prepared. The PDs showed excellent performance. For the photoconductor PD, the responsivity and EQE under the illumination of 254 nm light at 20 V bias were respectively 1.08 A/W and 5.32 x 102%. For the SBD PD, the I-254/Idark at -20 V was 320, and the corresponding rejection ratio I-254/I-365 was 42.

Automated summary

Beta-Ga2O3 is a promising material for solar-blind UV detection, and the crystal quality significantly affects the performance of photodetectors. In this study, high quality homoepitaxial beta-Ga2O3 films were grown by MOCVD for SBUV PD fabrication, demonstrating excellent performance for both photoconductor PD and SBD PD. The responsivity and EQE of photoconductor PD were 1.08 A/W and 5.32 x 102% under 254nm illumination, while the I-254/Idark and rejection ratio of SBD PD were 320 and 42, respectively.