4.8 Article

Excitonic transport driven by repulsive dipolar interaction in a van der Waals heterostructure

期刊

NATURE PHOTONICS
卷 16, 期 1, 页码 79-+

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NATURE PORTFOLIO
DOI: 10.1038/s41566-021-00908-6

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资金

  1. European Research Council [682332]
  2. Swiss National Science Foundation [175822, 177007, 164015]
  3. European Union [785219, 881603]
  4. CCMX Materials Challenge grant `Large area growth of 2D materials for device integration'
  5. Elemental Strategy Initiative [JPMXP0112101001]
  6. JSPS KAKENHI [19H05790, JP20H00354]
  7. European Research Council (ERC) [682332] Funding Source: European Research Council (ERC)

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Studies have shown that repulsive dipolar interactions significantly affect the dynamics of excitons in dilute systems, modifying the diffusion transport of excitons and enhancing the diffusion coefficient. By combining these interactions with electrical control techniques, new opportunities for excitonic devices are presented.
Dipolar bosonic gases are currently the focus of intensive research due to their interesting many-body physics in the quantum regime. Their experimental embodiments range from Rydberg atoms to GaAs double quantum wells and van der Waals heterostructures built from transition metal dichalcogenides. Although quantum gases are very dilute, mutual interactions between the particles could lead to exotic many-body phenomena such as Bose-Einstein condensation and high-temperature superfluidity. Here we report the effect of repulsive dipolar interactions on the dynamics of interlayer excitons in the dilute regime. By using spatially and temporally resolved photoluminescence imaging, we observe the dynamics of exciton transport, enabling a direct estimation of exciton mobility. The presence of interactions significantly modifies the diffusive transport of excitons, effectively acting as a source of drift force and enhancing the diffusion coefficient by one order of magnitude. Combining repulsive dipolar interactions with the electrical control of interlayer excitons opens up appealing new perspectives for excitonic devices.

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