First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors

Nano-membrane tri-gate beta-gallium oxide (beta-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with the footprint channel width of 50 nm. For high-quality interface between beta-Ga2O3 and gate dielectric, atomic layer-deposited 15 nm thick aluminum oxide (Al2O3) was utilized with tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV dec(-1), high drain current (I-DS) ON/OFF ratio of 1.5 x 10(9), and negligible transfer characteristic hysteresis. We also experimentally demonstrated robustness of these devices with current-voltage (I-V) characteristics measured at temperatures up to 400 degrees C.

Automated summary

Nano-membrane tri-gate beta-Gallium oxide field-effect transistors fabricated via exfoliation on SiO2/Si substrate demonstrate excellent performance, with extremely low subthreshold slope, high drain current ON/OFF ratio, stable transfer characteristics, and robustness at high temperatures up to 400 degrees C.