4.6 Article

Enhancement in external quantum efficiency of light-emitting diode based on colloidal silicon nanocrystals

期刊

NANOTECHNOLOGY
卷 32, 期 50, 页码 -

出版社

IOP Publishing Ltd
DOI: 10.1088/1361-6528/ac2ac1

关键词

colloidal silicon nanocrystals; light-emitting diode; electroluminescence; charge transport

资金

  1. NSFC [11504229, 51602193]
  2. Shanghai 'Chen Guang' project [16CG63]
  3. Open project of Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education)
  4. Shanghai Jiao Tong University
  5. Talent Program of Shanghai University of Engineering Science [QNTD202104]
  6. ESI Program of Shanghai University of Engineering Science [ESI201809, ESI201802]
  7. EPSRC [EP/R023581/1, EP/P009050/1]
  8. Shanghai Local Universities Capacity Building Project of Science and Technology Innovation Action Program [21010501700]

向作者/读者索取更多资源

In this study, enhanced red emission from colloidal silicon nanocrystals (c-Si NCs) solution-processed light-emitting diode was reported. The c-Si NCs were synthesized by facile femtosecond laser ablation. Both photoluminescence and electroluminescence were found to arise from the radiative recombination of carriers due to quantum confined effect. The optical power density and highest external quantum efficiency obtained were 0.79 mW cm(-2) and around 6.6%, respectively, indicating the potential of Si NCs as an attractive optical source for future integrated chips.
Herein, we report an enhanced red emission from colloidal silicon nanocrystals (c-Si NCs) solution-processed light-emitting diode. c-Si NCs were synthesized by facile femtosecond laser ablation. Based on the structural characterization and opto-electrics properties analysis, both photoluminescence and electroluminescence arise from the radiative recombination of carriers due to quantum confined effect. The optical power density and highest external quantum efficiency have been obtained to be 0.79 mW cm(-2) and similar to 6.6%, respectively. These results indicate that Si NCs are very attractive as a potential optical source for future integrated chips.

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