Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate

Recently, antimony-doped tin oxide nanoparticles (ATO NPs) have been widely used in the fields of electronics, photonics, photovoltaics, sensing, and other fields because of their good conductivity, easy synthesis, excellent chemical stability, high mechanical strength, good dispersion and low cost. Herein, for the first time, a novel nonvolatile transistor memory device is fabricated using ATO NPs as charge trapping sites to enhance the memory performance. The resulting organic nano-floating gate memory (NFGM) device exhibits outstanding memory properties, including tremendous memory window (similar to 85 V), superhigh memory on/off ratio (similar to 10(9)), long data retention (over 10 years) and eminent multilevel storage behavior, which are among the optimal performances in NFGM devices based on organic field effect transistors. Additionally, the device displays photoinduced-reset characteristic with low energy consumption erasing operation. This study provides novel avenues for the manufacture of simple and low-cost data storage devices with outstanding memory performance, multilevel storage behavior and suitability as platforms for integrated circuits.

Automated summary

This study presents the use of antimony-doped tin oxide nanoparticles (ATO NPs) in fabricating a novel nonvolatile transistor memory device. The resulting organic nano-floating gate memory (NFGM) demonstrates outstanding memory properties, such as a large memory window, high memory on/off ratio, long data retention, and excellent multilevel storage behavior. Additionally, the device exhibits photoinduced-reset characteristic with low energy consumption erasing operation.