4.8 Article

Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe2

期刊

NANO LETTERS
卷 22, 期 3, 页码 1115-1121

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c04237

关键词

perpendicular magnetic anisotropy; magnetic resonance force microscope; transition metal dichalcogenides; ferrimagnetic insulator

资金

  1. Center for Emergent Materials: an NSF MRSEC [DMR-2011876]
  2. MEXT, Japan [JPMXP0112101001]
  3. JSPS KAKENHI [19H05790, 20H00354, 21H05233]
  4. NSF [DMR 2128945, DMR-2004801]

向作者/读者索取更多资源

In this study, we report the emergence of perpendicular magnetic anisotropy and enhanced Gilbert damping induced by interfacial interactions in a heterostructure made of YIG and WTe2. The ability of WTe2 to enhance PMA in FM thin film, combined with its capability to generate out-of-plane damping like spin torque, makes it desirable for magnetic memory applications.
Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in a spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and a low-symmetry, high spin-orbit coupling (SOC) transition metal dichalcogenide, WTe2. At the same time, we also observed an enhancement in Gilbert damping in the WTe2-covered YIG area. Both the magnitude of interface-induced PMA and the Gilbert damping enhancement have no observable WTe2 thickness dependence down to a single quadruple layer, indicating that the interfacial interaction plays a critical role. The ability of WTe2 to enhance the PMA in FM thin film, combined with its previously reported capability to generate out-of-plane damping like spin torque, makes it desirable for magnetic memory applications.

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