Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure

An unusually large thermopower (S) enhancement is induced by heterostructuring thin films of the strongly correlated electron oxide LaNiO3. The phonon-drag effect, which is not observed in bulk LaNiO3, enhances S for thin films compressively strained by LaAlO3 substrates. By a reduction in the layer thickness down to three unit cells and subsequent LaAlO3 surface termination, a 10 times S enhancement over the bulk value is observed due to large phonon drag S (S-g), and the Sg contribution to the total S occurs over a much wider temperature range up to 220 K. The S-g enhancement originates from the coupling of lattice vibration to the d electrons with large effective mass in the compressively strained ultrathin LaNiO3, and the electron-phonon interaction is largely enhanced by the phonon leakage from the LaAlO3 substrate and the capping layer. The transition-metal oxide heterostructures emerge as a new playground to manipulate electronic and phononic properties in the quest for high-performance thermoelectrics.

Automated summary

A large enhancement in thermopower (S) is observed in thin films of LaNiO3 due to heterostructuring, with a 10 times enhancement over the bulk value. This enhancement is attributed to phonon drag effect and enhanced electron-phonon interaction, showing potential for high-performance thermoelectrics in transition-metal oxide heterostructures.