期刊
NANO LETTERS
卷 21, 期 21, 页码 9240-9246出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c03143
关键词
Thermoelectrics; Thin film heterostructure; Strongly correlated electron oxide; Transition-metal oxide
类别
资金
- PRESTO, Japan Science and Technology Agency [JPMJPR16R1]
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) [JPMXP0112101001]
- Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials from MEXT
- Japan Society for the Promotion of Science (JSPS) [19H02425, 20K21075]
- JSPS [16H06345, 21H04612]
- Austrian Science Fund (FWF) [P 30213]
- Grants-in-Aid for Scientific Research [16H06345, 21H04612, 20K21075] Funding Source: KAKEN
A large enhancement in thermopower (S) is observed in thin films of LaNiO3 due to heterostructuring, with a 10 times enhancement over the bulk value. This enhancement is attributed to phonon drag effect and enhanced electron-phonon interaction, showing potential for high-performance thermoelectrics in transition-metal oxide heterostructures.
An unusually large thermopower (S) enhancement is induced by heterostructuring thin films of the strongly correlated electron oxide LaNiO3. The phonon-drag effect, which is not observed in bulk LaNiO3, enhances S for thin films compressively strained by LaAlO3 substrates. By a reduction in the layer thickness down to three unit cells and subsequent LaAlO3 surface termination, a 10 times S enhancement over the bulk value is observed due to large phonon drag S (S-g), and the Sg contribution to the total S occurs over a much wider temperature range up to 220 K. The S-g enhancement originates from the coupling of lattice vibration to the d electrons with large effective mass in the compressively strained ultrathin LaNiO3, and the electron-phonon interaction is largely enhanced by the phonon leakage from the LaAlO3 substrate and the capping layer. The transition-metal oxide heterostructures emerge as a new playground to manipulate electronic and phononic properties in the quest for high-performance thermoelectrics.
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