期刊
NANO LETTERS
卷 22, 期 3, 页码 935-941出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c03625
关键词
hBN; graphene; spin injection; 1D contacts; van der Waals devices
类别
资金
- European Union [696656, 785219]
- Engineering and Physical Sciences Research Council (U.K.) EPSRC CDT Graphene NOWNANO [EP/L01548X]
- Secretaria Nacional de Educacion Superior, Ciencia y Tecnologia (SENESCYT)
- FP7 Marie Curie Initial Training Network Spintronics in Graphene (SPINOGRAPH)
- FP7 FET-Open Grant [618083]
- EPSRC Doctoral Training Partnership (DTP)
- Consejo Nacional de Ciencia y Tecnologia (Mexico)
Spin injection and tunable spin signal in graphene have been achieved using van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts, enabling high-quality graphene channels. At low temperature, spin signals can be enhanced by electrostatic gating.
Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and doping of the graphene channel, remains difficult to eliminate. Here, we report the observation of spin injection and tunable spin signal in fully encapsulated graphene, enabled by van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts, enabling high-quality graphene channels, currently with mobilities up to 130 000 cm (2) V-1 s(-1) and spin diffusion lengths approaching 20 mu m. The nanoscale-wide 1D contacts allow spin injection both at room and at low temperature, with the latter exhibiting efficiency comparable with 2D tunnel contacts. At low temperature, the spin signals can be enhanced by as much as an order of magnitude by electrostatic gating, adding new functionality.
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