4.8 Article

Transition Metal Synthetic Ferrimagnets: Tunable Media for All-Optical Switching Driven by Nanoscale Spin Current

期刊

NANO LETTERS
卷 21, 期 21, 页码 9210-9216

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c03081

关键词

all-optical magnetization switching; synthetic ferrimagnet; spintronics; magnetic recording; ultrafast spin current; negative remanence

资金

  1. Engineering and Physical Sciences Research Council (EPSRC) [EP/P021190/1, EP/P020151/1, EP/P02047X/1]
  2. Exeter Time-Resolved Magnetism Facility (EXTREMAG EPSRC Grant) [EP/R008809/1]
  3. DOE Office of Science User Facility [DE-AC02-05CH11231]
  4. EPSRC Centre for Doctoral Training in Photonic Integration & Advanced Data Storage [EP/L015323/01]
  5. Royal Academy of Engineering
  6. Seagate Technology (Ireland) under SOW [00077300.0]
  7. EPSRC Centre for Doctoral Training in Metamaterials [EP/L015331/1]
  8. EPSRC [EP/R008809/1, EP/P021190/1, EP/P02047X/1, EP/P020151/1] Funding Source: UKRI

向作者/读者索取更多资源

This study demonstrates a novel all-optical magnetization switching technology utilizing a perpendicularly magnetized synthetic ferrimagnet, allowing for independent magnetization switching. By applying a spin-polarized current, magnetization switching can be achieved over a broad temperature range, paving the way for the development of new data storage devices.
All-optical switching of magnetization has great potential for use in future ultrafast and energy efficient nanoscale magnetic storage devices. So far, research has been almost exclusively focused on rare-earth based materials, which limits device tunability and scalability. Here, we show that a perpendicularly magnetized synthetic ferrimagnet composed of two distinct transition metal ferromagnetic layers, Ni3Pt and Co, can exhibit helicity independent magnetization switching. Switching occurs between two equivalent remanent states with antiparallel alignment of the Ni3Pt and Co magnetic moments and is observable over a broad temperature range. Time-resolved measurements indicate that the switching is driven by a spin-polarized current passing through the subnanometer Ir interlayer. The magnetic properties of this model system may be tuned continuously via subnanoscale changes in the constituent layer thicknesses as well as growth conditions, allowing the underlying mechanisms to be elucidated and paving the way to a new class of data storage devices.

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