Resonant Light Emission from Graphene/Hexagonal Boron Nitride/Graphene Tunnel Junctions

Single-layer graphene has many remarkable properties but does not lend itself as a material for light-emitting devices as a result of its lack of a band gap. This limitation can be overcome by a controlled stacking of graphene layers. Exploiting the unique Dirac cone band structure of graphene, we demonstrate twist-controlled resonant light emission from graphene/hexagonal boron nitride (h-BN)/graphene tunnel junctions. We observe light emission irrespective of the crystallographic alignment between the graphene electrodes. Nearly aligned devices exhibit pronounced resonant features in both optical and electrical characteristics that vanish rapidly for twist angles theta greater than or similar to 3 degrees. These experimental findings can be well-explained by a theoretical model in which the spectral photon emission peak is attributed to photon-assisted momentum conserving electron tunneling. The resonant peak in our aligned devices can be spectrally tuned within the near-infrared range by over 0.2 eV, making graphene/h-BN/graphene tunnel junctions potential candidates for on-chip optoelectronics.

Automated summary

By controlled stacking of graphene layers, the limitation of single-layer graphene as a material for light-emitting devices has been overcome, enabling twist-controlled resonant light emission. Experimental findings show light emission irrespective of the crystallographic alignment between the graphene electrodes, with a spectrally tunable resonant peak in the near-infrared range.