期刊
NANO LETTERS
卷 21, 期 19, 页码 8274-8280出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c02771
关键词
Josephson junction; supercurrent distribution; band-bending effects; electrostatic gates
类别
资金
- DARPA TEE award [DP18AP900007]
- NDSEG Fellowship
- DARPA young faculty [D17AP00025]
This study demonstrates how local control of current distribution can be achieved in a Josephson junction using minigates, forming superconducting quantum interference devices. The enhanced edge conduction in long junctions can be eliminated by minigates to create a uniform current distribution.
The critical current response to an applied out-of- plane magnetic field in a Josephson junction provides insight into the uniformity of its current distribution. In Josephson junctions with semiconducting weak links, the carrier density, and therefore the overall current distribution, can be modified electrostatically via metallic gates. Here, we show local control of the current distribution in an epitaxial Al-InAs Josephson junction equipped with five minigates. We demonstrate that not only can the junction width be electrostatically defined but also the current profile can be locally adjusted to form superconducting quantum interference devices. Our studies show enhanced edge conduction in such long junctions, which can be eliminated by minigates to create a uniform current distribution.
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