Fabrication of Hydrogen Boride Thin Film by Ion Exchange in MgB2

In this study, hydrogen boride films are fabricated by ion-exchange treatment on magnesium diboride (MgB2) films under ambient temperature and pressure. We prepared oriented MgB2 films on strontium titanate (SrTiO3) substrates using pulsed laser deposition (PLD). Subsequently, these films were treated with ion exchangers in acetonitrile solution. TOF-SIMS analysis evidenced that hydrogen species were introduced into the MgB2 films by using two types of ion exchangers: proton exchange resin and formic acid. According to the HAXPES analysis, negatively charged boron species were preserved in the films after the ion-exchange treatment. In addition, the FT-IR analysis suggested that B-H bonds were formed in the MgB2 films following the ion-exchange treatment. The ion-exchange treatment using formic acid was more efficient compared to the resin treatment; with respect to the amount of hydrogen species introduced into the MgB2 films. These ion-exchanged films exhibited photoinduced hydrogen release as observed in a powder sample. Based on the present study, we expect to be able to control the morphology and hydrogen content of hydrogen boride thin films by optimising the ion-exchange treatment process, which will be useful for further studies and device applications.

Automated summary

In this study, hydrogen boride films are fabricated by ion-exchange treatment on MgB2 films, introducing hydrogen species and forming B-H bonds within the films. The efficiency of hydrogen introduction is influenced by the type of ion-exchange treatment, with formic acid treatment showing higher efficiency. These ion-exchanged films exhibit photoinduced hydrogen release, suggesting potential applications in further studies and device development.