期刊
MICROSCOPY RESEARCH AND TECHNIQUE
卷 85, 期 4, 页码 1300-1310出版社
WILEY
DOI: 10.1002/jemt.23996
关键词
atomic layer deposition; Bi2O3; BiFeO3; Fe2O3; flexible substrate; functionalized surface; multiferroic
资金
- MEYS [LM2018110]
- Ministry of Education, Youth and Sports of the Czech Republic [CEITEC 2020 LQ1601]
- Internal Grant Agency of Vysoke Uc.eni Technicke v Brne. [FEKT-S-20-6352]
Thin films of bismuth and iron oxides were successfully deposited on a flexible Kapton substrate using ALD technique, exhibiting uniform distribution of elements, electrical polarization, and ferromagnetic response. The functionalization of Kapton surface with bismuth and iron oxides allows for the adaptation of Bi-Fe-O system to flexible electronics.
Thin films of bismuth and iron oxides were obtained by atomic layer deposition (ALD) on the surface of a flexible substrate poly(4,4 '-oxydiphenylene-pyromellitimide) (Kapton) at a temperature of 250 degrees C. The layer thickness was 50 nm. The samples were examined by secondary-ion mass spectrometry, and uniform distribution of elements in the film layer was observed. Surface morphology, electrical polarization, and mechanical properties were investigated by atomic force microscope, piezoelectric force microscopy, and force modulation microscopy. The values of current in the near-surface layer varied in the range of +/- 80 pA when a potential of 5 V was applied. Chemical analysis was performed by X-ray photoelectron spectroscopy, where the formation of Bi2O3 and Fe2O3 phases, as well as intermediate phases in the Bi-Fe-O system, was observed. Magnetic measurements were carried out by a vibrating sample magnetometer that showed a ferromagnetic response. The low-temperature method of functionalization of the Kapton surface with bismuth and iron oxides will make it possible to adapt the Bi-Fe-O system to flexible electronics.
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