Recharging process of commercial floating-gate MOS transistor in dosimetry application

We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.

Automated summary

The study revealed the dose rate dependence of the floating gate dosimeter and its stable dosimetric and reprogramming characteristics under a constant dose rate. The absorbed dose did not affect the threshold voltage readings drift after irradiation steps, indicating promising potential for dosimetric applications over multiple irradiation cycles.