Fast and efficient approach for multi-component quantum wells analysis based on FFT

Elaboration of the technology of the multicomponent Quantum Wells (QWs) based devices requires repeated time consuming diffraction curves analysis proceeded for each of the grown structures to determine their basis structural parameters. Optimization of the diagnostic procedures and making them more efficient is the key point from the manufacturer point of view. In this paper we present the use of Fast Fourier Transform (FFT) employed to fast determination of the thickness of epitaxial layers. The presented method combines the approach using the Rocking Curves (RC) measured by X-ray Diffraction (XRD) together with the analysis of the FFT spectrum. In this work GaInNAs/GaAs MQWs structures grown by atmospheric pressure-metalorganic vapour phase epitaxy (APMOVPE) were investigated. In the case of the series of the defined type samples, this method allows replacement of the time consuming simulation method used for diagnostic of the thickness of deposited layers in favor of FFT spectrum analysis.

Automated summary

This paper presents the use of Fast Fourier Transform for the fast determination of epitaxial layer thickness, combining Rocking Curves measured by X-ray Diffraction and FFT spectrum analysis for GaInNAs/GaAs MQWs structures.