4.8 Article

Integrating spin-based technologies with atomically controlled van der Waals interfaces

期刊

MATERIALS TODAY
卷 51, 期 -, 页码 350-364

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.mattod.2021.09.015

关键词

Interface; van der Waals; Spintronics; Molecular beam epitaxy; Magnetism

资金

  1. Fundamental Research Funds for the Central Universities
  2. Natural Science Foundation of Shaanxi Province, China [2021JM-042]

向作者/读者索取更多资源

This review critically evaluates the state-of-the-art of van der Waals interfaces and their potential technological applications in spintronics. It highlights major challenges, proposes a viable solution, and identifies emerging spin-based technologies that could benefit from the versatile van der Waals interfaces enabled by the strategy.
As the feature sizes of electronic devices continue to shrink, new technologies-in particular spintronics and derived interfacial architectures-become increasingly pivotal. In this context, two-dimensional van der Waals materials and their interfaces are particularly attractive, relying on their ultimate atomic thicknesses and exceptional spin-related properties. This review provides a critical evaluation on the state-of-the-art of van der Waals interfaces and projected technological applications in spintronics, highlights major challenges and a viable solution-an all-in-situ growth and characterization strategy, and finally identifies several emerging spin-based technologies that might significantly benefit from the versatile van der Waals interfaces enabled by the strategy.

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