Effect of oxygen partial pressure on microstructure, optical and electrical property of C-Al co-doped ZnO films

C-Al co-doped ZnO films with superior optical and electrical property have been deposited at oxygen partial pressure range 1-7 Pa by pulse laser deposition. The influences of oxygen pressure on crystalline, optical and electrical property have been investigated. The C-Al co-doped ZnO films exhibit a superior crystallinity and greater grain size in the range of 1 Pa-3 Pa compared to AZO films. Furthermore, carbon doping at various oxygen partial pressure significantly improves the optical and electrical property. C-Al co-doped ZnO film reaches the lowest resistivity of 3.1x10-4 omega cm at 1 Pa. The average transmittance is higher than 85% and attains the optimal value of 89.9 %.

Automated summary

C-Al co-doped ZnO films deposited at oxygen partial pressure range of 1-7 Pa by pulse laser deposition exhibit superior optical and electrical properties. The films show improved crystallinity and grain size at 1-3 Pa compared to AZO films, and carbon doping significantly enhances the optical and electrical properties. The lowest resistivity of 3.1x10-4 omega cm is achieved at 1 Pa, with an average transmittance higher than 85% and optimal value of 89.9%.