Microstructure evolution and dislocation strengthening mechanism of Cu-Ni-Co-Si alloy

An in-depth exploration of the microstructure evolution and characterization of the dislocation density in Cu-Ni-Si-Co alloy was performed using X-ray diffraction electron backscattering diffraction, transmission electron microscopy, three-dimensional atom probe technique, and high-energy X-ray diffraction (HEXRD). The results reveal that the tensile strength and electrical conductivity of the alloy are 937.27 MPa and 45.57% IACS, respectively, and that it has good stress relaxation resistance. There are many dislocation tangles, dislocation lines, dislocation cells, and deformation twins in alloys processed by cyclic cryogenic rolling and lowtemperature aging. The alloy contains both 300-600 nm coarse particle precipitates and 5-10 nm rod-like nano-precipitated phases composed of (Ni, Co)2Si. The average dislocation density is (35.967 +/- 1.513) x 1014 m- 2, and the twin stacking-fault probability is 14.414 +/- 0.333 x 10-3 in the alloy aged at 350 degrees C for 2 h.

Automated summary

By conducting an in-depth exploration of the microstructure evolution and characterization of the dislocation density in Cu-Ni-Si-Co alloy, it was found that the alloy has good mechanical properties and electrical conductivity. The study also identified various structural features of the alloy, highlighting its potential for performance optimization and application.