Temperature-dependent resistive switching behaviour of an oxide memristor

In this work, we report the temperature-dependent transport and resistive switching behaviour of a promising hybrid structure made of La0.7Ca0.3MnO3 (LCMO) and reduced graphene oxide (rGO). The current-voltage (IV) characteristics are non-linear across the studied temperature range of 100 K-300 K, which is also temperature dependent. The memristive effect is most prominent at 200 K, while the reduction of hysteresis in the IV-curve with decrease in temperature is ascribed to the low thermal energy of the charge carriers. The charge transport in the SET and RESET process at different temperatures can be explained using trap-controlled space charge limited conduction mechanism for temperature >200 K and Poole-Frenkel emission at temperatures below that.

Automated summary

This work investigates the temperature-dependent transport and resistive switching behavior of a hybrid structure composed of LCMO and rGO. The non-linear IV characteristics across the temperature range, with the most prominent memristive effect at 200K, suggest a potential for use in electronic devices. The charge transport mechanisms in the SET and RESET processes can be explained by trap-controlled space charge limited conduction and Poole-Frenkel emission at different temperatures.