Ion-beam modification of metastable gallium oxide polymorphs

Structural changes under the action of Al+ irradiation have been investigated by X-ray diffraction for polymorphic Ga2O3 layers grown by halide vapor phase epitaxy on c-plane sapphire and consisting predominantly of alpha-phase with inclusions of e(x)-phase. As a result of irradiation, some new reflections appear, which can be interpreted in two ways - either as a phase transition of the alpha- and/or e(x)-phase to the more stable 8-phase, or as a selective radiation-stimulated strain of the e(x)-phase, i.e., an increase in the interplanar distance of a family of planes parallel to the surface. The discussed ion-stimulated phenomena have to be taken into account when utilizing ion implantation to modify Ga2O3 properties.

Automated summary

The structural changes of polymorphic Ga2O3 layers under Al+ irradiation were investigated using X-ray diffraction, revealing new reflections which can be interpreted in two ways. These ion-stimulated phenomena need to be taken into account when utilizing ion implantation to modify Ga2O3 properties.