Non-Debye relaxation of AgBiSe2 single crystal featuring flip-flop jumps in Bi valence state

The ternary chalcogenide based pristine AgBiSe2 semiconductor single crystal was studied for the temperature dependence dielectric measurement. The anomalous behaviour of dielectric constant and dielectric loss at higher frequency were discussed in detail. The activation energy due to the dc conductivity as well as hopping frequency were extracted from the Arrhenius equation. Moreover, the charge transport of Ag+ ions as well as the flip-flop between the pairs of Bi4+ and Bi3+ ions is responsible for various electrical properties in this crystal.

Automated summary

In this study, the temperature-dependent dielectric properties of the pristine AgBiSe2 semiconductor single crystal were investigated. Anomalous behavior of dielectric constant and dielectric loss at higher frequencies were discussed, and activation energies due to DC conductivity and hopping frequency were extracted using the Arrhenius equation. Furthermore, it was found that charge transport of Ag+ ions and flipping between pairs of Bi4+ and Bi3+ ions play a significant role in determining the electrical properties of this crystal.