Effect of the triple (Al, Ga, In) doping in ZnO nanostructures on its transmission, conductivity, and stability for TCO applications

We report the effect of simultaneous doping of three elements aluminum (Al), gallium (Ga) and indium (In), in ZnO nanostructures on its transmission, conductivity, and stability. The triply doped ZnO nanostructures have been synthesized using co-precipitation method and the material has been characterized by various techniques. The results are compared with the undoped ZnO as well as ZnO doped with individual elements (i.e., Al/Ga/In). All the samples have been found possessing hexagonal wurtzite structure. The transparency, conductivity as well as stability (when exposed to high temperature and humidity) of the triply doped ZnO are found better than individually doped ZnO. Our results suggest that doping of three elements may give rise to significant improvement in the properties (transmission, conductivity, and stability), as required for transparent conductive oxide (TCO) applications.

Automated summary

Simultaneous doping of three elements (Al, Ga, and In) in ZnO nanostructures improves transparency, conductivity, and stability. The triply doped ZnO shows better performance in these areas compared to individually doped ZnO. This suggests that doping of three elements may lead to significant improvement in properties for transparent conductive oxide applications.