期刊
LASER & PHOTONICS REVIEWS
卷 15, 期 11, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/lpor.202100140
关键词
infrared; processing; nonlinear propagation; silicon; laser-matter interaction; laser direct writing
资金
- Bundesministerium fur Bildung und Forschung (BMBF) [03IHS107A]
- European Research Council (ERC) [724480, 617521, 966846]
- TuBTAK - The Scientific and Technological Research Council of Turkey [20AG024, 20AG001, 219M274]
- TUBA-GEBIP award
- Qatar National Research Fund [NPRP11S-1128-170042]
- Projekt DEAL
- European Research Council (ERC) [617521, 966846] Funding Source: European Research Council (ERC)
The article reviews the physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses, as well as the strategies established so far for bypassing these limitations. These solutions have allowed addressing numerous applications by employing longer pulses, femtosecond-pulse trains, and surface-seeded bulk modifications.
Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond-pulse trains, and surface-seeded bulk modifications have allowed addressing numerous applications.
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