Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers

N+ ion implantation to form resistive regions for edge termination at the anode contact periphery was used to maximize the breakdown voltage (V-B) of vertical geometry beta-Ga2O3 rectifiers. The design was examined via simulations using the Florida object oriented device and process Technology Computer-Aided Design (TCAD) simulator. The configuration of the implanted region was investigated with these simulations and then implemented experimentally. Significant increases of similar to 200%-250% in V-B were achieved for 50-1000 mu m diameter rectifiers with an unbounded resistive region and an implantation depth of similar to 0.5 mu m. The on-state resistance and on/off ratios of the rectifiers were essentially unchanged by the addition of the implanted regions. An optimized implanted edge termination structure maximizes the breakdown voltage with no associated increase in device resistance in vertical geometry Ga2O3 rectifiers. Published under an exclusive license by the AVS.

Automated summary

In order to maximize the breakdown voltage of vertical geometry beta-Ga2O3 rectifiers, N+ ion implantation was used to form resistive regions for edge termination at the anode contact periphery. Through simulations and experimental implementation, significant increases in breakdown voltage were achieved without affecting the on-state resistance and on/off ratios of the rectifiers. The optimized implanted edge termination structure successfully increased the breakdown voltage without increasing device resistance in vertical geometry Ga2O3 rectifiers.