Development of mean-field continuum dislocation kinematics with junction reactions using de Rham currents and graph theory

An accurate description of the evolution of dislocation networks is an essential part of discrete and continuum dislocation dynamics models. These networks evolve by motion of the dislocation lines and by forming junctions between these lines via cross slip, annihilation and junction reactions. In this work, we introduce these dislocation reactions into continuum dislocation models using the theory of de Rham currents. We introduce dislocations on each slip system as potentially open lines whose boundaries are associated with junction points and, therefore, still create a network of collectively closed lines that satisfy the classical relations alpha = curl beta(p) and div alpha = 0 for the dislocation density tensor alpha and the plastic distortion beta(p). To ensure this, we leverage Frank's second rule at the junction nodes and the concept of virtual dislocation segments. We introduce the junction point density as a new state variable that represents the distribution of junction points within the crystal containing the dislocation network. Adding this information requires knowledge of the global structure of the dislocation network, which we obtain from its representation as a graph. We derive transport relations for the dislocation line density on each slip system in the crystal, which now includes a term that corresponds to the motion of junction points. We also derive the transport relations for junction points, which include source terms that reflect the topology changes of the dislocation network due to junction formation.

Automated summary

This work presents how the evolution of dislocation networks and their reactions are introduced into continuum dislocation models. By leveraging de Rham currents theory and Frank's second rule, the study ensures that the structure of the dislocation network satisfies classical relations. Additionally, the introduction of junction point density as a new state variable represents the distribution of junction points in the crystal.