Hydrolysis protection and sintering of aluminum nitride powders with yttria nanofilms

Aluminum nitride (AlN) is a promising material for electronic substrates and heat sinks. However, AlN powders react with water that adversely affects final part properties and necessitates processing in organic solvents, increasing the cost of AlN parts. Small quantities of yttrium oxide (Y2O3) are commonly added to AlN particles to enable liquid phase sintering. To mitigate the reaction of AlN particles with water, particle atomic layer deposition (ALD) was used to coat AlN powders with conformal films of Y2O3 prior to densification and powder processing. When AlN particles were coated with 6 nm thick films of amorphous Y2O3, the hydrolysis reaction was significantly suppressed over 48 h, demonstrating that Y2O3 nanofilms on AlN powders act as a barrier coating in an aqueous solution. AlN powders with Y2O3 addition by particle ALD sintered to high relative densities (>= 90% theoretical) after sintering at 1800 degrees C for 50 min.

Automated summary

Aluminum nitride (AlN) is a promising material for electronic substrates and heat sinks. To reduce its reaction with water, particle atomic layer deposition (ALD) was used to coat AlN powders with yttrium oxide (Y2O3) films. The addition of Y2O3 enabled high density sintering of AlN powders.