DIELECTRIC LAYERS BCxNy: SYNTHESIS BY THE DECOMPOSITION OF VAPORS OF ORGANOBORON COMPOUNDS, COMPOSITION AND CHEMICAL STRUCTURE

Composition, chemical structure, and dielectric characteristics of boron carbonitride films BCxNy prepared by chemical vapor deposition upon thermal and plasma activation of the initial gas mixture are studied. The dependence of elemental composition, dielectric constant, and resistivity of the films on synthesis conditions (type of the organoboron precursor, synthesis temperature, type and content of the additional gas) are determined by Auger electron spectroscopy and X-ray photoelectron spectroscopy. The dielectric constants of prepared films vary within 3.7-6.3 and their resistivities vary within 10(12)-10(15) Omega.cm. The stability of dielectric properties of BCxNy films during their storage in air is studied for the first time.

Automated summary

The composition, chemical structure, and dielectric characteristics of boron carbonitride films BCxNy prepared by chemical vapor deposition are studied, with a focus on the dependence of elemental composition, dielectric constant, and resistivity on synthesis conditions. The dielectric constants of the films range from 3.7 to 6.3, with resistivities varying from 10^12 to 10^15 Omega.cm. The study also investigates the stability of dielectric properties of BCxNy films during storage in air for the first time.