期刊
JOURNAL OF SOLID STATE CHEMISTRY
卷 305, 期 -, 页码 -出版社
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jssc.2021.122656
关键词
Additive engineering; CsPbI2Br; PVP; Perovskite solar cells
资金
- Program for the Innovation Team of Science and Technology in University of Henan of China [20IRTSTHN014]
- Excellent Youth Foundation of Henan Scientific Committee [202300410356]
- Project of Science and Technology Tackling Key Problems in Henan Province of China [212102210003]
By incorporating polyvinylpyrrolidone (PVP) into CsPbI2Br perovskite at a low temperature using a one-step spin coating approach, the optoelectronic properties of the film were greatly enhanced, leading to improved charge carrier separation and suppression of charge recombination. The PVP-CsPbI2Br device achieved a high power conversion efficiency of 10.47%, making it a promising option for future research and applications in photovoltaic devices.
Owing to the inevitability of moisture/thermal instability in organic-inorganic hybrid perovskites, pure inorganic perovskites such as CsPbI2Br perovskite have surfaced as promising options for commercial perovskite solar cells (PSCs) due to their high photovoltaic performance and excellent inherent stability. However, designing additive engineering approaches to mitigate defect-induced crystalline phase transitions from a photosensitive perovskite phase to a non-perovskite phase has been a difficult task for researchers. In this work, using a one-step spin coating approach, we have prepared a polyvinylpyrrolidone (PVP) polymer-incorporated stable phase of CsPbI2Br at a low temperature (120 degrees C). Examinations using structural, morphological, and photo-physical measurements revealed that the optimum amount of PVP can greatly improve the optoelectronic properties of the film, which facilitates in reducing the trap states and defect in perovskite film, thus enabling charge carrier separation and suppressing charge recombination. As a result, the device based on 5 mg-PVP achieves a champion power conversion efficiency (PCE) of 10.47%, with a fill factor (FF) of 56.35%, a short-circuit current (J(SC)) of 18.47 mA cm(2), and an open-circuit voltage (V-OC) of 1.01 V, which is significantly higher than the device without PVP (6.36%). These findings suggest that PVP-CsPbI2Br has tremendous promise for future research and application in photovoltaic devices.
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