Preparation of Cu3N thin films by nitridation of solution process-derived thin films using urea

Thin films of Cu3N were prepared by nitridation of CuO precursor films on a glass substrate, using urea as a nitrogen source. First, CuO thin films were prepared by a solution process using copper acetate as a starting material. Then CuO thin film and urea were placed at downstream and upstream sides in a tube furnace, respectively, and heated under a nitrogen flow to supply the vaporized urea constituent to the surface of CuO precursor film. X-ray diffraction patterns and absorbance spectra showed that Cu3N was formed with heat-treatment at 400 degrees C for 12 h under nitrogen flow. FT-IR spectra suggest that Cu3N was formed by the reaction of CuO and decomposition products of urea. [GRAPHICS] .

Automated summary

Thin films of Cu3N were successfully obtained by nitridation of CuO precursor films using urea as a nitrogen source. The formation of Cu3N was confirmed at 400 degrees C for 12 hours under nitrogen flow, with FT-IR spectra indicating the reaction between CuO and urea decomposition products.