期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 55, 期 11, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac3ce8
关键词
HfO2 thin films; neutron irradiation; oxide trapped charge; interface state; MOS capacitors
资金
- Science Challenge Project [TZ 2018004]
This study investigated the properties of oxide trapped charges and interface state density in MOS capacitors with an Au/HfO2-SiO2/Si structure under irradiation of 14 MeV neutron and Co-60 gamma-ray. It was found that the formation of oxide trapped charges depends on the total deposited ionization energy, while the displacement damage caused by 14 MeV neutrons can be ignored. The interface state density depends not only on the ionizing energy loss but also the non-ionizing energy loss, with the latter playing a major role at lower neutron fluence. The results also confirm the importance of the synergistic effect of neutron and gamma irradiation in damaging HfO2 MOS devices.
The properties of oxide trapped charges and interface state density in the metal oxide semiconductor (MOS) capacitors with an Au/HfO2-SiO2/Si structure were investigated under irradiation of 14 MeV neutron and Co-60 gamma-ray. In the mixed neutron and gamma irradiation environment, the formation of the oxide trapped charges in the HfO2-SiO2 layer is determined by the total deposited ionization energy, i.e. the sum of ionization energy deposition of the neutrons and the accompanying gamma rays, while the influence of the displacement damage caused by 14 MeV neutrons can be ignored. The interface state density depends not only on the ionizing energy loss (IEL) but also the non-IEL (NIEL), and NIEL plays a major role below the critical neutron fluence of 4.5 x 10(12) n cm(-2). The synergistic effect of the interface state is observed increases with energy deposition in the oxide at lower fluences, while decreasing above the critical fluence. These results confirm the existence of the synergistic effect of neutron and gamma irradiation in damaging HfO2 MOS devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据