期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 55, 期 3, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac2cad
关键词
conical nanostructured GaN; nanostructure; photodetectors; electrochemical etching
资金
- National Natural Science Foundation of China [61774148, 11974343]
A new type of conical nanostructured GaN and its high-performance metal-semiconductor-metal photodetectors are reported. Compared with planar detectors, the conical nanostructured detectors exhibit higher photocurrent, responsivity, and detectivity at the same voltage.
Here, we report on a new type of conical nanostructured GaN (CNG), and the corresponding high performance GaN-based metal-semiconductor-metal (MSM) photodetectors (PDs). Compared with the control planar GaN-based MSM PDs, the photocurrent increases by similar to 600 times at 0.4 V. The responsivity of the CNG-based PDs can reach similar to 2 x 10(4) A W-1 at 4 V, increased by similar to 2000 times compared to the planar GaN-based PDs. The specific detectivity of the CNG-based PDs reaches the maximum at 1 V, similar to 10(14) Jones, which is more than 800 times to that of the planar GaN-based PDs. Our work paves the way to develop high-performance GaN-based PDs using a new nanostructure for detecting weak optical signals.
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