期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 55, 期 11, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac3f0d
关键词
epitaxy; germanium; photonics; gadolinium oxide
资金
- Science and Engineering Research Board, Department of Science and Technology (DST), Government of India
- Centre of Excellence in Nano-electronics (CEN), Indian Institute of Technology, Bombay
- Industrial Research and Consulting Centre (IRCC), Indian Institute of Technology, Bombay
The role of post-growth cyclic annealing (PGCA) and subsequent regrowth in improving the crystal quality and surface morphology of (111)-oriented Ge epitaxial layers grown by low temperature molecular beam epitaxy is investigated. It is found that PGCA effectively suppresses planar defects in Ge(111) epilayers. Additionally, PGCA promotes adatom down-climb and heals the surface morphology, leading to further improvement upon Ge regrowth.
The role of post-growth cyclic annealing (PGCA) and subsequent regrowth, on the improvement of crystal quality and surface morphology of (111)-oriented Ge epitaxial layers, grown by low temperature (300 degrees C) molecular beam epitaxy on epi-Gd2O3/Si(111) substrates, is reported. We demonstrate that PGCA is efficient in suppressing rotational twins, reflection microtwins and stacking faults, the predominant planar defect types in Ge(111) epilayers. Continuing Ge growth after PGCA, both at low (300 degrees C) and high (500 degrees C) temperatures, does not degrade the crystal quality any further. By promoting adatom down-climb, PGCA is observed to also heal the surface morphology, which is further improved on Ge re-growth. These results are promising for development of high-quality Ge(111) epitaxial layers for photonic and electronic applications.
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