Hydrogen-Anion-Induced Carrier Recombination in MAPbI3 Perovskite Solar Cells

Identification and passivation of defect-induced electron-hole recombination centers are currently crucial for improving the efficiency of hybrid perovskite solar cells. Besides general intrinsic defects, experimental reports have indicated that hydrogen interstitials are also abundant in hybrid perovskite layers; however, few reports have evaluated the effect of such defects on the charge carrier recombination and device efficiencies. Here, we reveal that under I-poor synthesis conditions, the negatively charged monatomic hydrogen interstitial, H-i(-), will form in the prototypical CH3NH3PbI3 perovskite layer, acting as a detrimental deep-level defect, which leads to efficient electron-hole recombination and lowers the cell performance. We further rationalize that Br doping can mitigate the large atomic displacement caused by the presence of H-i(-) and hence suppress the formation of the deep localized state. The results advance the knowledge of the deep-level defects in hybrid perovskites and provide useful information for enhancing solar cell performance by defect engineering.

Automated summary

Identification and passivation of defect-induced electron-hole recombination centers are crucial for improving efficiency of hybrid perovskite solar cells. Hydrogen interstitials, particularly H-i(-), formed under I-poor synthesis conditions, act as detrimental deep-level defects leading to efficient recombination and decreased cell performance. Br doping can mitigate atomic displacement caused by H-i(-) and suppress deep localized states, providing useful information for defect engineering to enhance solar cell performance.