相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices
Nasir Ilyas et al.
ADVANCED FUNCTIONAL MATERIALS (2022)
Controllable resistive switching of STO:Ag/SiO2 -based memristor synapse for neuromorphic computing
Nasir Ilyas et al.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY (2022)
A novel WOx-based memristor with a Ti nano-island array
Zhaozhu Qu et al.
ELECTROCHIMICA ACTA (2021)
Environmental reliability and moisture barrier properties of silicon nitride and silicon oxide films using roll-to-roll plasma enhanced chemical vapor deposition
Won Jae Lee et al.
THIN SOLID FILMS (2021)
Oxygen Vacancy-Dependent Synaptic Dynamic Behavior of TiOx-Based Transparent Memristor
Yu She et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Memristor modeling: challenges in theories, simulations, and device variability
Lili Gao et al.
JOURNAL OF MATERIALS CHEMISTRY C (2021)
Emulation of biphasic plasticity in retinal electrical synapses for light-adaptive pattern pre-processing
Lindong Wu et al.
NANOSCALE (2021)
Threshold Switching in Single Metal-Oxide Nanobelt Devices Emulating an Artificial Nociceptor
Ming Xiao et al.
ADVANCED ELECTRONIC MATERIALS (2020)
Threshold switching of non-stoichiometric CuO nanowire for selector application
Chi-Hsin Huang et al.
APPLIED PHYSICS LETTERS (2020)
Synaptic learning and memory functions in SiO2:Ag/TiO2 based memristor devices
Dongyang Li et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device
Nasir Ilyas et al.
NANOSCALE RESEARCH LETTERS (2020)
Resistive switching materials for information processing
Zhongrui Wang et al.
NATURE REVIEWS MATERIALS (2020)
On-Chip TaOx-Based Non-volatile Resistive Memory for in vitro Neurointerfaces
Maksim Zhuk et al.
FRONTIERS IN NEUROSCIENCE (2020)
Performance Improvement of Conductive Bridging Random Access Memory by Electrode Alloying
Leilei Qiao et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2020)
TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices
Katarzyna Bejtka et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching
Yiyang Li et al.
ADVANCED MATERIALS (2020)
Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices
Asif Ali et al.
APPLIED SURFACE SCIENCE (2020)
High-Uniformity Threshold Switching HfO2-Based Selectors with Patterned Ag Nanodots
Yujia Li et al.
ADVANCED SCIENCE (2020)
The strategies of filament control for improving the resistive switching performance
Teng Li et al.
JOURNAL OF MATERIALS CHEMISTRY C (2020)
Self-rectifying and interface-controlled resistive switching characteristics of molybdenum oxide
Chih-Chieh Hsu et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2019)
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling
Wei Wang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Fabrication of a Cu-Cone-Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability
Hae Jin Kim et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application
Ying-Chen Chen et al.
SCIENTIFIC REPORTS (2019)
Robust Ag/ZrO2/WS2/Pt Memristor for Neuromorphic Computing
Xiaobing Yan et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Synapse behavior characterization and physical mechanism of a TiN/SiOx/p-Si tunneling memristor device
Zhenyu Zhou et al.
JOURNAL OF MATERIALS CHEMISTRY C (2019)
Extrinsic Dopant Effects on Oxygen Vacancy Formation Energies in ZrO2 with Implication for Memristive Device Performance
Handan Yildirim et al.
ACS APPLIED ELECTRONIC MATERIALS (2019)
Mechanistic Analysis of Oxygen Vacancy-Driven Conductive Filament Formation in Resistive Random Access Memory Metal/NiO/Metal Structures
Handan Yildirim et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor
Ya Li et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Optogenetics-Inspired Tunable Synaptic Functions in Memristors
Xiaojian Zhu et al.
ACS NANO (2018)
Short-Term Plasticity and Long-Term Potentiation in Artificial Biosynapses with Diffusive Dynamics
Min-Kyu Kim et al.
ACS NANO (2018)
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
Adnan Mehonic et al.
ADVANCED MATERIALS (2018)
Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application
Qing Luo et al.
IEEE ELECTRON DEVICE LETTERS (2018)
All-Solid-State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing
Chuan-Sen Yang et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications
Zhongrui Wang et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Forgetting memristor based neuromorphic system for pattern training and recognition
Peijian Zhang et al.
NEUROCOMPUTING (2017)
A novel true random number generator based on a stochastic diffusive memristor
Hao Jiang et al.
NATURE COMMUNICATIONS (2017)
Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
Can Li et al.
NATURE COMMUNICATIONS (2017)
Reliable current changes with selectivity ratio above 109 observed in lightly doped zinc oxide films
Un-Bin Han et al.
NPG ASIA MATERIALS (2017)
Guiding the Growth of a Conductive Filament by Nanoindentation To Improve Resistive Switching
Yiming Sun et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Nanometer-Scale Phase Transformation Determines Threshold and Memory Switching Mechanism
Byeong-Gyu Chae et al.
ADVANCED MATERIALS (2017)
Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory
Hao Jiang et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity
Rivu Midya et al.
ADVANCED MATERIALS (2017)
Nanoscale electrochemistry using dielectric thin films as solid electrolytes
Ilia Valov et al.
NANOSCALE (2016)
Space charge limited current mechanism (SCLC) in the graphene oxide-Fe3O4 nanocomposites/n-Si heterojunctions
Zakir Caldiran et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2015)
Temperature-dependent thermoelectric properties of individual silver nanowires
D. Kojda et al.
PHYSICAL REVIEW B (2015)
Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
Stefan Tappertzhofen et al.
ACS NANO (2013)
Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
Jui-Yuan Chen et al.
NANO LETTERS (2013)
Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
Qi Liu et al.
ADVANCED MATERIALS (2012)
Resistive switching in silicon suboxide films
Adnan Mehonic et al.
JOURNAL OF APPLIED PHYSICS (2012)
Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)
Observation of conducting filament growth in nanoscale resistive memories
Yuchao Yang et al.
NATURE COMMUNICATIONS (2012)
Electrochemical metallization memories-fundamentals, applications, prospects (vol 22, 254003, 2011)
Ilia Valov et al.
NANOTECHNOLOGY (2011)
Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells
Chang-Po Hsiung et al.
ACS NANO (2010)
Resistive Switches and Memories from Silicon Oxide
Jun Yao et al.
NANO LETTERS (2010)
Temperature dependence of the resistance of metallic nanowires of diameter ≥15 nm:: Applicability of Bloch-Gruneisen theorem (vol 74, pg 035426, 2006)
Aveek Bid et al.
PHYSICAL REVIEW B (2006)
分享论文
