Organosilicon compounds as single-source precursors for SiCN films production

Silicon carbonitride SiCN films have attracted considerable interest due to their outstanding characteristics, such as dielectric, optical, mechanical properties, thermal stability, oxidation resistance, etc. The composition and properties of the films can be changed by tailoring the deposition approach and synthesis conditions. Use of single-source precursors leads to gentle incorporation of units with Si-C, Si-N, and C-N bonds originated from the initial molecule. This review presents the developments and discusses chemical vapor deposition methods, performance, and applications of SiCN films. The processes of SiCN film deposition using volatile organosilicon compounds as single-source precursors are described in detail. Different compounds, including linear and cyclic silazanes, aminosilanes, carbodiimides, hydrozinosilanes are considered. Some correlations in the row: synthesis conditions and chemical structure of the precursor -film chemical bonding structure and composition-properties are discussed. (c) 2021 Elsevier B.V. All rights reserved.

Automated summary

Silicon carbonitride (SiCN) films have attracted considerable interest due to their outstanding characteristics, and the composition and properties of the films can be changed by tailoring the deposition approach and synthesis conditions. This review provides a detailed overview of the deposition process of SiCN films using volatile organosilicon compounds as single-source precursors, and discusses the correlations between the chemical structure and properties of the films.