期刊
JOURNAL OF NUCLEAR MATERIALS
卷 555, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jnucmat.2021.153143
关键词
6H-SiC; Quantitative crystal damage profiling; EBS
资金
- Ministry of Education, Science and Technological Development of the Republic of Serbia
- Horizon 2020 project AIDA-2020 [654168]
- Croatian Science Foundation under the project MIOBICC [8127]
This article focuses on introducing crystal lattice damage in 6H-SiC through ion implantation, similar to what neutron exposure would produce. Various techniques including Elastic Backscattering spectra, micro-Raman and scanning electron microscopy were used for investigating and analyzing crystal damage profiles, showing good consistency among the results obtained from different techniques.
The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (mu R) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the mu R and SEM techniques shows very good consistency between them. (C) 2021 Elsevier B.V. All rights reserved.
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