Study of InGaZnO Thin Film Transistors With Dual Treatment of Pre-Oxidation ZrO2 High-K Dielectric and Post-Oxidation InGaZnO Channel by Neutral Beam System

With better field-effect mobility (>10 cm(2)/V center dot S), smaller subthreshold swing (S.S), and other electrical characteristics, amorphous IGZO thin film transistors (a-IGZO TFTs) has been studied extensively for its promising applications, such as liquid crystal displays and flat-panel displays. In this investigation, TFT devices are experimented to enhance the electrical characteristics. Atmosphere Pressure-PECVD (AP-PECVD) is used to deposit a-IGZO, which is designed as device channel layer. In order to maintain enough gate control ability with thinner effective oxide thickness (EOT), high-kappa material ZrO2 is used as dielectric, lowering the gate leaking current. With post dual neutral beams O-2 plasma treated on both a-IGZO channel layer 400 W and ZrO2 dielectric 100 W, the best result for experimetal devices show that the a-IGZO TFT has electrical charIP 49.249.253.194 On: Wed 16 Feb 2022 06:35:35 acteristics of field-effect mobility of 22.22 cm(2)/V center dot S, threshold voltage (V-T) of 2.86 V, S.S of 74 mV/decade, Copyright: Amer an Scient fic Publ shers and I-on/I-off ratio of 8.2 x 10(5).

Automated summary

The study focuses on improving the electrical characteristics of a-IGZO TFTs by using high-kappa material ZrO2 as dielectric and conducting post dual neutral beams treatment, resulting in enhanced performance of the experimental devices.