期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 33, 期 6, 页码 3384-3396出版社
SPRINGER
DOI: 10.1007/s10854-021-07536-4
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- Program for GaN epitaxy and preparation of semiconductor power devices [KH186057]
White light-emitting CNO:Tb3+, Eu3+ phosphors were successfully synthesized by adjusting the doping content of Tb3+ and Eu3+ ions, and showed good color stability and application prospects.
A series of host-activated Tb3+ and Eu3+-co-doped CaNb2O6 (CNO) phosphors with tunable luminescence were synthesized via high-temperature solid-state method with the purpose of developing single-component phosphors for white light-emitting diode (LED) devices. Benefiting from blue broadband emission of CNO and multiple energy transfer of NbO43- -> Tb3+ -> Eu3+, white light-emitting CNO:Tb3+, Eu3+ phosphors were achieved by reasonably adjusting the doping content of Tb3+ and Eu3+ ions. Two typical white light-emitting phosphors, CNO:0.015Tb(3+), 0.02Eu(3+) with color coordinate (0.33, 0.33) and CNO:0.10Tb(3+), 0.05Eu(3+) with color coordinate (0.40, 0.39), could maintain 63% and 73% of the initial integral intensity at 150 degrees C and had good color stability. Subsequently, the representative CNO:0.015Tb(3+), 0.02Eu(3+) phosphors were successfully applied to a 275 nm ultraviolet chip to fabricate a white LED device with a low correlated color temperature of 3464 K and a high color rendering index of 86.0. The above results indicate that synthesized single-component white light-emitting CNO:Tb3+, Eu3+ phosphors have good application prospects in the field of white LED. Moreover, this strategy of using self-activated host and multiple energy transfer also provides guidance for the design of novel white light-emitting phosphors.
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